Philips bfg21w 800drv2 free download

File name bfg21w_800drv2.pdf

Philips Semiconductors 800MHz PA Driver with BFG21W 800MHz PA Driver with BFG21W Application Note JL-9803v2 Author Jarek Lucek November 8, 1998 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract th BFG21W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver applications in AMPS, TDMA, CDMA and GSM systems. BFG21W's performance is superior at 800MHz, 3.0V applications. Under CW mode, the part is capable of P1dB=25dBm, efficiency of 70% and Gp of 17dB. BFG21W delivers 23dBm of linear output power under TDMA with Gp of 18dB and efficiency of over 50%. Under CDMA mode, BFG21W delivers 19dBm of linear output power with G of 19 dB and efficiency of p 35%. Philips Semiconductors 800MHz PA Driver with BFG21W INTRODUCTION BFG21W is Philips Semiconductors' 5th generation silicon bipolar RF wideband transistor in SOT343R plastic SMD package. The transistor delivers superior performance at frequencies below 3 GHz. It is manufactured according to the double poly process and characterised by high transition frequency (fT > 20 GHz) at low sub 3 Volt supply voltages. This application notes describes BFG21W performance at 800MHz operation under CW, 2 Tone, TDMA and CDMA conditions. PERFORMANCE OVERVIEW The table below summarises BFG21W performance capabilities under different modes of operation. P1dB or Plinear* Gain** Efficiency*** System Vsupply dBm dB % Icq=10mA Icq=20mA Icq=10mA Icq=20mA Icq=10mA Icq=20mA 3.0 Volts 24 24.5 18 18.2 66 68 CW 3.5 Volts 24.5 25 18.8 19 60 63 3.0 Volts 19 19 19 19.5 43 41 2Tone 3.5 Volts 20.5 20.5 19.5 19.9 43 40 3.0 Volts 21 23 18.9 18.2 48 60 TD